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Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
27
Citations
9
References
2009
Year
Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsLow Dislocation DensityNanotechnologyApplied PhysicsJune 2009Gan Power DeviceEpitaxial GrowthA-plane Gan
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Shih-Chun Ling, Chu-Li Chao, Jun-Rong Chen, Po-Chun Liu, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Shun-Jen Cheng, Jenq-Dar Tsay; Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density. Appl. Phys. Lett. 22 June 2009; 94 (25): 251912. https://doi.org/10.1063/1.3158954 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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