Applied Physics Letters · 2012 · 45 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringCarrier ConfinementCarrier Confinement In Quantum WellsCompressive StrainPulsed LasersQuantum Well GainQuantum Well HeterostructuresQuantum Well LasersQuantum Well Structures
Room-temperature lasing at 2.55 μm is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 μm.
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Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 428 citations