Type-II InP-based lasers emitting at 2.55 <i>μ</i>m

Abstract

Room-temperature lasing at 2.55 μm is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 °C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 μm.