Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors

Abstract

Transfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (∼300 °C), which is applicable to flexible plastic substrates.