Optical Energy Gap in TlSe

Abstract

Abstract The results of a study to characterize samples of single crystals of TlSe grown by the Bridgman‐Stockbarger and zone recrystallization techniques are given. The X‐ray diffraction patterns were indexed as a tetragonal lattice whose parameters were a = 8.02 Å and c = 7.00 Å. The absorption and transmission measurements in the region from 0.64 to 1.20 eV yield an estimate for the band gap for the indirect transition as 0.73 eV, which agrees with that obtained from photoconductivity experiments.