Sub-micrometer-sized, cross-type Nb–AlOx–Nb tunnel junctions with low parasitic capacitance

Abstract

We report on a technology for the fabrication of sub-micrometer sized cross-type Josephson tunnel junctions in niobium technology. We present the fabrication scheme and properties of cross-type junctions with linear dimensions from 10 down to 0.6 µm. Sidewall passivation of the junctions is achieved by anodization as well as by planarizing the junctions with SiO in a self-aligned deposition step. The measured ratio of the sub-gap resistance to the normal resistance is about 35. Because of their low sub-gap current and low parasitic capacitance such junctions are well suited for applications like high resolution SQUIDs.