Flexible and Transparent Silicon‐on‐Polymer Based Sub‐20 nm Non‐planar 3D FinFET for Brain‐Architecture Inspired Computation

Galo A. Torres Sevilla, Jhonathan P. Rojas, Hossain M. Fahad, Aftab M. Hussain, Rawan Ghanem, Casey Smith, Muhammad M. Hussain

Advanced Materials · 2014 · 55 citations · 36 references

Concepts

Abstract

An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

References

36