Applied Physics Letters · 1988 · 19 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsLaser DiodesSemiconductor HeterostructuresSemiconductor LasersWide Band Gap SemiconductorsDiode Laser Threshold CurrentEvanescent WavesFacet CoatingsHeterostructure DevicesHeterostructure LasersHigh-power Semiconductor LasersMode-locked Semiconductor LasersSemiconductor Laser Diodes
A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.
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Fundamental mode oscillation of a buried ridge waveguide laser array
Seiji Mukai, C. Lindsey, J. Katz et al. · Applied Physics Letters · 1984 · 53 citations
In-phase emission from index-guided laser array up to 400 mW
Dave Welch, P.S. Cross, D. R. Scifres et al. · Electronics Letters · 1986 · 52 citations
Natural Sciences, Materials Engineering, Materials Science +13
High-power (cw) in-phase locked ‘‘<i>Y</i>’’ coupled laser arrays
David Welch, P.S. Cross, D. R. Scifres et al. · Applied Physics Letters · 1986 · 34 citations
Engineering, Electrical Engineering, Electronic Materials +16