Electronic structure of GaSb/GaAs quantum domes

Abstract

Recent experimental results indicate that the conduction-band offset in GaSb/GaAs quantum dots is much smaller than previously thought. We have modeled the electronic structure of self-assembled GaSb/GaAs dots and established good contact with experimental photoluminescence spectra. However, it appears that the standard picture of confinement is not adequate to fully account for the data and offer guidelines for fresh experimentation.