Journal of Applied Physics · 1980 · 93 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDevice FabricationHeterostructure DevicesHeterostructure LasersHeterostructure OptoelectronicsIntegrated Semiconductor LasersLiquid Phase EpitaxySemiconductor Laser DiodesSemiconductor Laser Fabrication
InGaAsP/InP buried-heterostructure lasers with a stripe width of 1–2 μm have been fabricated by two-step liquid phase epitaxy and preferential chemical etching. They operate in the fundamental transverse mode at wavelengths of ∼1.3 μm with threshold current as low as 22 mA. The temperature limit for cw operation is 80 °C.
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