Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions

Abstract

TiO 2 (oxygen rich, region 1)/TiO2−x (oxygen poor, region 2) multilayer homojunctions were studied as alternative resistive switching structures for both high and low resistance transitions. Stable bipolar resistive switching characteristics, including stable switching speeds (microseconds) and endurance behaviors, as well as long retention times (>104 s) were demonstrated. The nature of the resistive switching phenomenon in multilayer structures seems to be a combination of the conduction path and the redox reaction, resulting from the oxygen ions drifting between the oxygen rich and poor regions of the multilayer structures. A possible conduction sketch for bipolar switching behaviors is also discussed.