Computer simulation of thin film nucleation and growth

Abstract

Some of the processes involved in thin film nucleation and growth were simulated by means of a digital computer. The main conclusions drawn from the simulation results are (1) Because of the random nature of the processes involved, a large variation in results is obtained. (2) Upon impingement, clusters are formed up to a coverage of ca. 0.2, and from there on growth of existing clusters, rather than formation of new ones, takes place. (3) Surface migration is responsible for the formation of most of the clusters at coverages smaller than 0.1, whereas at higher coverages most clusters are formed upon impingement. (4) Surface migration accelerates the growth and causes reduction in cluster density. (5) Reevaporation slows the growth and reduces the cluster density dramatically.