Low-voltage and high-gain pentacene inverters with plasma-enhanced atomic-layer-deposited gate dielectrics

Abstract

The pentacene thin-film transistors with the plasma-enhanced atomic-layer-deposited 150nm thick Al2O3 or 120nm thick ZrO2 have been operated at gate voltages between −3 and 3V. The inverter with a ZrO2 gate dielectric shows a gain of 49 and a full swing from supply voltage (Vdd) to 0V, operating at input voltages (Vin) from 0to−1V and at Vdd of −1V. The hysteresis observed in the voltage transfer characteristic of the inverter depends on the scan range of Vin applied to the driver transistor, regardless of the Vdd applied to the load transistor.