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Optically induced long-lived electron spin coherence in ZnSe∕BeTe type-II quantum wells
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Citations
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References
2008
Year
Quantum ScienceSpintronicsQuantum OpticEngineeringPhysicsQuantum DeviceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsSpin CoherenceZnse LayersQuantum Photonic DeviceOptoelectronicsLong Electron Spin
The spin coherence of photoexcited electrons in ZnSe∕BeTe type-II quantum wells has been investigated by the time-resolved Kerr rotation technique. Fast and efficient escape of photoexcited holes from the ZnSe layers to the BeTe layers suppresses the electron-hole recombination and their exchange interaction. This effect leads to the formation of dense electrons in ZnSe layers and long electron spin dephasing time reaching a value of 6.1ns at 1.4K.
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