Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance

Abstract

Single-crystalline Si wafers were directly bonded to single-crystalline 6H-SiC wafers (Si-on-SiC), followed by thinning of the Si wafers to around 1μm. A Si metal-oxide-semiconductor field-effect transistor (MOSFET) was then fabricated on the Si layer. In a high-temperature atmosphere (∼300°C), the channel mobility of a Si MOSFET on a conventional Si wafer degraded by around 80%. The Si MOSFET fabricated on the Si-on-SiC wafer, however, showed almost no degradation in its channel mobility from heating. This confirmed that the high thermal conductivity of single-crystalline 6H-SiC improves the heat dissipation performance of Si MOSFETs.