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<i>In situ</i> observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy
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1995
Year
SemiconductorsMaterials ScienceOptical MaterialsEngineeringCrystalline DefectsPhysicsSr IrradiationNatural SciencesSurface ScienceApplied PhysicsSih DecreasesChemistryThin FilmsMolecular Beam EpitaxyEpitaxial GrowthSilicon HydridesChemical Vapor DepositionSolar Cell Materials
Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3.