Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System

Abstract

We found the yield of GaN grown in a Li-Na flux system to be much higher than that grown in Na flux. Nitrogen dissolution seemed to increase with Li in solution, which promotes the growth of GaN crystals. In this paper, we report that the yield of GaN and habit modifications greatly depend on the composition of the Li-Na flux system and that GaN can be grown in a pure Li flux at about 50 atm.