Metal‐Induced Gap States at a Carbon‐Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy

Abstract

Naturally occurring carbon-nanotube heterojunctions provide a unique opportunity for studying nearly one-dimensional metal–semiconductor (M–S) interfaces. Coupling the nanoscale lateral precision of the ultrahigh-vacuum STM with spatially-resolved electronic measurements enables detailed characterization of a single-walled carbon nanotube M–S junction (see figure) and of the metal-induced gap states present at the interface.