Emission properties of InGaAs/GaAs heterostructures with δ⟨Mn⟩-doped barrier

Abstract

Light-emitting device heterostructures with a δ⟨Mn⟩-doped layer inserted between the Schottky contact and near-surface InGaAs/GaAs quantum well (QW) have been fabricated. The δ⟨Mn⟩-doped layer facilitates hole tunnelling from the Schottky contact to the QW and impedes that of QW electrons in the opposite direction. It leads to a highly enhanced electroluminescence signal from the InGaAs QW. An effective p–d exchange interaction of holes with magnetic moments of Mn ions is found to strongly enhance the effective hole g-factor and the circular polarization of the low (∼2 K) temperature emission up to 20% in magnetic fields of 1–2 T.