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Electron Tunneling Study of NbSe<sub>3</sub>
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1987
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SemiconductorsSemiconductor TechnologyEngineeringTunneling MicroscopyPhysicsPoint ContactBias Temperature InstabilityApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSuperconductivityElectron Tunneling StudyDcs ValueSemiconductor MaterialNbse 3Electron Physic
The two CDW energy gaps of NbSe 3 were measured by means of the point contact tunneling technique. The peak to peak values of energy gaps at T=4.2K are·typically 2Δ H ≃180 mV and 2Δ L ≃73 mV from the NbSe 3 -Au junction, where Δ H and Δ L correspond to the higher CDW transition temperature T H =145K and lower one T L =59K, respectively. From these values, we obtained that 2Δ H /kT H =14.4 and 2Δ L /kT L =14.3, which are much larger than the DCS value.