Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Abstract

We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of $\ensuremath{\sim}150\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.