Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe - Concepedia

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Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

26

Citations

19

References

2013

Year

Gilberto A. Umana‐Membreno, H Kala, J. Antoszewski, Z.H. Ye, Weida Hu, Rui Ding, Xiaoshuang Chen, Wei Lü, Liang He, J.M. Dell,

Journal of Electronic Materials

Electrical EngineeringElectronic Transport ParametersEngineeringPhysicsApplied PhysicsDepth ProfilingSemiconductor MaterialMicroelectronicsCharge Carrier TransportSemiconductor Device

References

	Year	Citations

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