Some characteristics of In-diffused CuInSe2 homojunctions

Abstract

CuInSe2 homojunctions have been fabricated by diffusing indium (at 200 °C) into p-type monocrystalline samples. The electrical and photovoltaic properties of the junctions were investigated at room temperature. The majority carrier concentration distribution in the p-type side of the junction was determined from differential capacitance measurements.