IEEE Transactions on Magnetics · 1989 · 45 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsThin FilmsDefects In Electronic MaterialsSemiconductor Device MaterialsSuperconducting MaterialsSuperconducting Thin FilmsThin Film Electrical PropertiesThin-film MaterialsCurrent-voltage RelationsFilm StrainFilm StressIntrinsic StressJosephson JunctionsStressStress MeasurementX-ray Diffraction Analysis
The intrinsic stress and its relaxation process are discussed for sputtered Nb films used for the electrodes in Nb/AlO/sub x//Nb Josephson junctions. The stress, optically measured for Nb films, depends on the Ar pressure during sputtering, and it changes from compressive to tensile when the Ar pressure is increased. From X-ray diffraction, the shift in the lattice constant was observed to be proportional to the film stress. Changes in the lattice constant were also clearly observed when Nb films were etched to fine patterns. This suggests that the intrinsic stress in Nb films is relaxed at peripheral areas after the patterning process, and that such relaxation is one cause of deterioration in current-voltage characteristics frequently observed in small Josephson junctions. This indicates that stress-free Nb should be used for submicrometer junctions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Intrinsic stress of magnetron-sputtered niobium films
C.-T. Wu · Thin Solid Films · 1979 · 119 citations
Natural Sciences, Materials Engineering, Materials Science +13
High quality Nb/Al-AlOx/Nb Josephson junction
S. Morohashi, Fujitoshi Shinoki, Akira Shoji et al. · Applied Physics Letters · 1985 · 111 citations