Effects of <scp>A</scp> ‐Site <scp>S</scp> m Substitution and Textured Structure on Electric Properties of <scp>C</scp> a <scp>B</scp> i ₂ <scp>N</scp> b ₂ <scp>O</scp> ₉ ‐Based High‐Curie‐Temperature Ceramics

Abstract

C a B i 2 N b 2 O 9 ceramic is a promising candidate for high‐temperature piezoelectric applications due to its high C urie temperature. However, extremely low piezoelectric properties hinder its application. A combination of S m 3+ donor doping and texturing was applied to address this problem. Piezoelectric coefficient, T c , and resistivity of textured C a 0.95 S m 0.05 B i 2 N b 2 O 9 ceramics ( d 33 = 23pC/N, T c = 941°C, ρ = 4.1 × 10 5 Ω cm at 600°C) were obviously higher than those of pure random C a B i 2 N b 2 O 9 ceramics ( d 33 = 6, T c = 930°C, ρ =0.6 × 10 5 Ω cm at 600°C). Furthermore, it had excellent resistance to depolarization property, with k p of about 5.9% until 600°C.