Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

Abstract

Single domain GaAs layers have been grown on Si (100) surface by molecular beam epitaxy. RHEED observation indicates that antiphase disorder could be suppressed by tilting the orientation of Si (100) surface around <110> axis but were unavoidable on just (100) surface. The off-axis substrates also improve the surface morphology.