High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility

Abstract

Transistor performances of lateral and vertical 3C-SiC MOSFETs are investigated in the temperature range of 25 °C to 300 °C. Both types of MOSFETs operate up to 300 °C and the lateral MOSFETs possess peak channel mobility of more than 100 cm 2 /(Vs) even at 300 °C for the [110]- and [-110]-channel directions. In both MOSFETs, on-currents decrease monotonically and threshold voltages shift negatively as the temperature increases. The temperature dependence of on-currents in the lateral MOSFETs is weaker than that in the vertical MOSFETs. The leakage current at the negative gate voltage increases at above 200 °C. The activation energies calculated from the leakage currents at 200 °C and 300 °C are about half of the 3C-SiC bandgap energy of 2.3 eV.