Room temperature operation of InAs∕AlSb quantum cascade lasers

Abstract

The room temperature operation of InAs∕AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5μm operate in pulse regime up to 300K. The threshold current density of 3.18-mm-long lasers is 1.5kA∕cm2 at 83K and 9kA∕cm2 at 300K.