Applied Physics Letters · 2004 · 88 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsPlasmonicsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor LasersCurrent DensityLasersMolecular Beam EpitaxyQuantum Cascade LasersQuantum Cascade StructuresSemiconductor Laser FabricationTransition Design
The room temperature operation of InAs∕AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5μm operate in pulse regime up to 300K. The threshold current density of 3.18-mm-long lasers is 1.5kA∕cm2 at 83K and 9kA∕cm2 at 300K.
9
Low-loss Al-free waveguides for unipolar semiconductor lasers
Carlo Sirtori, P. Kruck, S. Barbieri et al. · Applied Physics Letters · 1999 · 126 citations