Versatile Use of Vertical‐Phase‐Separation‐Induced Bilayer Structures in Organic Thin‐Film Transistors

Abstract

A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly(3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200702505_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.