Effects of dislocations on electron transport in wurtzite InN

Abstract

A semiclassical three-valley Monte Carlo simulation approach was used to investigate electron transport in bulk InN using a revised set of material parameters. The simulation accounted for acoustic phonons, polar optical phonons, ionized impurities, and piezoelectric and dislocation scattering. The main emphasis is to analyze the effect of dislocations on the electron drift velocity and drift mobility. At low electric field strengths, dislocations have a significant impact on the steady and transient electron drift velocities. However, at high electric field strengths, the effects of dislocations on the drift velocity can be neglected. The electron mobility in InN with structural defects has a critical dislocation density below which dislocations have no effect on the mobility and beyond which the increased dislocation density results in an order-of-magnitude decrease in the electron mobility in InN.