Ultrasmall silicon quantum dots

Abstract

We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state spectrum. The Si channel lengths are visible in scanning electron microscopy images and match the dimensions predicted by a model based on the Poisson equation. The smallest dots (<12 nm) allow identification of the last charge and thus the creation of a single-charge quantum dot.