GaAlAs window lasers emitting 500 mW CW in fundamental mode

Abstract

Single element GaAlAs lasers using the buried heterostructure geometry with tapered waveguides and incorporating nonabsorbing facets have been fabricated. Metalorganic chemical vapour phase deposition was used for the double heterostructure first growth, and liquid phase epitaxy was used for the current confining and nonabsorbing facet second growth. 500 mW CW in single spatial mode emission was obtained from devices with 1 mm long cavities.