Carrier concentration, mobility, and electron effective mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy

Abstract

We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower electron effective mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.