Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet

Abstract

Ferromagnetic Ge:Mn has been fabricated by Mn implantation in intrinsic Ge wafers and by pulsed laser annealing with a pulse duration of 300 ns. Due to a segregation instability during laser annealing, Mn segregates at the liquid-solid interface and an approximately 40 nm thick Ge:Mn surface layer is strongly enriched with Mn. Plan-view images reveal a percolating Mn-rich nanonet. Hysteretic anomalous Hall effect has been observed up to 30 K, but it vanishes after etching away the 40 nm thick Mn-rich Ge:Mn surface layer. The nanonet seems to support the correlation between magnetization and hysteretic Hall resistance. Intrinsic scattering in the threads or vertices of this nanonet may lead to the observed anomalous Hall effect.