Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy - Concepedia

Concepedia

Publication | Closed Access

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

10

Citations

6

References

1995

Year

Yoshikatsu Ichimura, Katsumi Kishino, Mitsunari Satake, Masaru Kuramoto, Atsushi Yoshida

Journal of Crystal Growth

Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringGaas SubstratesApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound Semiconductor

References

	Year	Citations

Page 1