Negative Magnetoresistance in Silicon (100) MOS Inversion Layers

Abstract

The observation of the negative magnetoresistance in silicon (100) n-channel inversion layers is well reproduced by the recent theory for the random potential scattering in two dimension by Hikami, Larkin and Nagaoka. The parameter α is 0.30±0.05 at an areal concentration of electrons of 5.0×10 12 cm -2 .