Channeling of MeV Projectiles in Tungsten and Silicon

Abstract

Wide-angle Rutherford scattering has been used to investigate experimentally the channeling behavior of several projectiles ($^{1}\mathrm{H}$, $^{4}\mathrm{He}$, $^{12}\mathrm{C}$, $^{16}\mathrm{O}$, and $^{35}\mathrm{Cl}$) in tungsten crystals in the energy region 2 to 30 MeV; the study has also been extended to silicon crystals, using a 3.0-MeV $^{1}\mathrm{H}$ beam. The observed critical angles and minimum scattering yields are compared with theoretical predictions. In general, the agreement is excellent. In both W and Si, precise energy analysis of the scattered beam has also provided detailed information on the depth and temperature dependence of channeling; a marked difference is observed between the planar and axial channeling processes. Some preliminary measurements in Au and U${\mathrm{O}}_{2}$ crystals are included.