Applied Physics Letters · 1985 · 166 citations · 19 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsAbsorption SpectraExcitonsHeterojunction DevicesInfrared Absorption SpectraOptical Absorption In Quantum WellsOptical Absorption SpectraQuantum Well HeterostructuresQuantum Well Structures
The first observation of strong and well-resolved exciton peaks in the room-temperature absorption spectra of infrared band-gap multiple quantum well structures (MQW’s) is reported. Assignment of the optical resonances in the absorption spectra of GaInAs/AlInAs MQW’s yields the material parameters of this new heterojunction. The discontinuities of the conduction and valence bands are found to be ΔEc=0.44 eV and ΔEv=0.29 eV, respectively.
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Exciton binding energy in quantum wells
G. Bastard, E. E. Méndez, L. L. Chang et al. · Physical review. B, Condensed matter · 1982 · 829 citations