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Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wells
166
Citations
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References
1985
Year
SemiconductorsQuantum ScienceWide-bandgap SemiconductorPhotoluminescenceEngineeringCategoryquantum ElectronicsPhysicsQuantum DeviceOptoelectronic MaterialsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsRoom-temperature ExcitonsOptical ResonancesWell-resolved Exciton PeaksCompound SemiconductorMaterial ParametersSemiconductor Nanostructures
The first observation of strong and well-resolved exciton peaks in the room-temperature absorption spectra of infrared band-gap multiple quantum well structures (MQW’s) is reported. Assignment of the optical resonances in the absorption spectra of GaInAs/AlInAs MQW’s yields the material parameters of this new heterojunction. The discontinuities of the conduction and valence bands are found to be ΔEc=0.44 eV and ΔEv=0.29 eV, respectively.
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