Electronics Letters · 1995 · 33 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLaser DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor SurfacesDevice FabricationFabricationHigh-power Semiconductor LasersIntegrated Semiconductor LasersMetalorganic Vapor Phase EpitaxySemiconductor Laser FabricationVertical-cavity Surface-emitting Lasers
The authors present state-of-the-art performance obtained from producible, 850 nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity surface-emitting lasers (VCSELs). Record CW room-temperature device performance includes threshold voltages Vth = 1.55 V, submilliamp threshold currents Ith = 0.68 mA, unbonded CW output power Pcw = 59 mW, total wallplug efficiencies of ηwp = 28% and CW lasing to Tcw = 200°C. These results were obtained from the same fabrication processes annd similar epigrowth designs, which exhibited 99.8% device yield across a 3"-diameter metal organic vapour phase epitaxy (MOVPE)-grown wafer.
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