Concepedia

Temperature-induced metallization of the Si(100) surface

C. C. Hwang, Tae Hui Kang, K. J. Kim, Bumman Kim, Yoonyoung Chung, C.-Y. Park

Physical review. B, Condensed matter · 2001 · 17 citations · 22 references

DOI

Concepts

Abstract

We provide evidence for the temperature-induced metallization (TIM) of Si(100) surface. A TIM takes place at about 600 K without any change in surface periodicity. Contrary to previous suggestions, photoemission spectroscopy (PES) reveals that the TIM is not related to the (instantaneous) symmetrization of asymmetric dimers. We suggest that Si adatoms produced at elevated temperatures play a role of donor, giving rise to the TIM.

References

22

Volume-expansion-induced lattice instability and solid-state amorphization

K. Kusunoki · Physical review. B, Condensed matter · 1996 · 446 citations

, , +14

Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 and<i>c</i>(4×2) reconstructions

E. Landemark, C. J. Karlsson, Yimin Chao et al. · Physical Review Letters · 1992 · 382 citations

, , +17

Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)

Takeshi Tabata, Tetsuya Aruga, Yoshitada Murata · Surface Science · 1987 · 277 citations

, , +12

<i>Ab initio</i>calculations of Si, As, S, Se, and Cl adsorption on Si(001) surfaces

Peter Krüger, J. Pollmann · Physical review. B, Condensed matter · 1993 · 190 citations

, , +17

Structural Phase Diagrams for the Surface of a Solid: A Total-Energy, Renormalization-Group Approach

Jisoon Ihm, D. H. Lee, John D. Joannopoulos et al. · Physical Review Letters · 1983 · 187 citations

, , +17