High-performance irreversibility field and flux pinning force density in BaHfO₃-doped GdBa₂Cu₃O<i>_y</i>tape prepared by pulsed laser deposition

Abstract

The high irreversibility field Bi and strong flux pinning force were obtained for BaHfO3-doped GdBa2Cu3Oy tapes on a metallic Hastelloy substrate with an ion beam-assisted deposition MgO buffer layer. At 77.3 K, Bi of 15.8 T and the maximum flux pinning force density of 23.5 GN/m3 for B ∥ c were achieved for the 1.5 vol % BaHfO3-doped GdBa2Cu3Oy tape, which are the world's highest recorded values for REBa2Cu3Oy-coated conductors on metallic substrates (RE = rare earth). From the flux pinning analysis, the c-axis correlated pinning by well-aligned BaHfO3 nanorods plays an important role in achieving the high irreversibility field and flux pinning force density performance.