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A 0.1mm/sup 2/, Digitally Programmable Nerve Stimulation Pad Cell with High-Voltage Capability for a Retinal Implant

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Citations

2

References

2006

Year

Abstract

A 0.1mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> autonomous and digitally programmable nerve stimulation pad cell in 0.35μm HVCMOS is used in a 232-electrode retinal implant. It provides greater than plusmn15V swing at the electrode in order to supply suitable stimulation currents into large electrode impedances. Customized ESD protection is used on all electrodes. Charge balancing is applied to prevent electrolysis

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