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Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

Materials ScienceOxide HeterostructuresEngineeringCrystalline DefectsOxide ElectronicsSurface ScienceApplied PhysicsThin Film Process TechnologyThin FilmsMolecular Beam EpitaxyEpitaxial GrowthMetal–insulator TransitionThin Film Processing