The effect of irradiation with electrons on the electrical parameters of Hg3In2Te6

Abstract

The results of studying the electrical properties of Hg3In2Te6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 1016 cm−2 are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg3In2Te6 samples acquire the charge-carrier concentration (1.6–1.8) × 1013 cm−3 after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg3In2Te6 crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at T > 260 K.