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Threshold current reduction in InGaN MQW laserdiode with λ/4air/semiconductor Bragg reflectors

DOI

14

Citations

6

References

2000

Year

C. Marinelli, L.J. Sargent, A. Wonfor, JM Rorison, RV Penty, I.H. White, P.J. Heard, G. Hasnain, Rodrigo Schneider
Electronics Letters

Abstract

A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5λ/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching.

References

YearCitations

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