The Czochralski Growth of (Lu_1−<i>x</i>Gd_<i>x</i>)₂SiO₅:Dy Single Crystals: Structural, Optical, and Dielectric Characterization

Abstract

The Czochralski growth of Dy 3+ -doped (Lu 1− x Gd x ) 2 SiO 5 solid solution single crystals with different mixtures of Lu 2 SiO 5 and Gd 2 SiO 5 oxides ( x = 0, 0.2, 0.4, 0.6, 0.8, and 1) is reported. It was found that the (Lu 1− x Gd x ) 2 SiO 5 crystals retain structural, physical, and optical properties of Lu 2 SiO 5 even for x = 0.8. Optical investigation of Dy:(Lu 1− x Gd x ) 2 SiO 5 revealed that the structural disorder of the host brings about a strong inhomogeneous broadening of Dy 3+ spectral bands while influencing weakly rates of its radiative and nonradiative transitions. Dielectric characteristics of solid solution crystals are presented and discussed. Finally, (Lu 1− x Gd x ) 2 SiO 5 solid solution crystals seem to be an attractive alternative to a Lu 2 SiO 5 host for the design of novel phosphors, radiation converters, and lasers owing to a significantly lower melting temperature and hence easier and less expensive manufacturing.