Single‐Crystalline Diluted Magnetic Semiconductor GaN:Mn Nanowires

Abstract

Single-crystalline diluted magnetic semiconductor GaN:Mn nanowires with controlled Mn concentrations have been successfully synthesized and incorporated into devices. These nanowires exhibit Curie temperatures above room temperature, magnetoresistances near room temperature, and spin-dependent transport. The nanowires are used as building blocks for the fabrication of GaN:Mn/n-SiC based light-emitting diodes.