Journal of Physics Condensed Matter · 2004 · 10 citations · 13 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsMaterials PhysicsDefects In Electronic MaterialsIii-v SemiconductorsMagnetic Properties Of SolidsRelaxation MechanismsDefect DynamicsDefect KineticsDefect StructuresDynamicsImpurity KineticsLongitudinal RelaxationLongitudinal Relaxation TimeSpin Relaxation Dynamics
Sites and dynamics obtained for muonium (Mu) defect centres provide a good experimental model for the behaviour of the equivalent hydrogen impurities. We discuss the dynamic properties of Mu centres in the III–V nitrides focusing on features common to the three materials. Muon spin depolarization data in zero magnetic field provide motional dynamics for the Mu+ and Mu− charge states and field dependent longitudinal relaxation rates probe motion of Mu0 centres. The data also show dynamics associated with metastable locations, either intrinsic to the wurtzite structure or defect related, including trapping and release transitions. A general picture of the behaviour of H in the III–V nitrides is developed from these measurements for comparison to theoretical results.
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Shallow donor state of hydrogen in indium nitride
Edwin Adams Davis, Sharon Cox, R. L. Lichti et al. · Applied Physics Letters · 2003 · 91 citations · Full text
Diffusion and Charge Dynamics of Negatively Charged Muonium in<i>n</i>-Type GaAs
K. H. Chow, B. Hitti, R. F. Kiefl et al. · Physical Review Letters · 1996 · 56 citations
Quantum diffusion of muonium in GaAs
R. Kadono, R. F. Kiefl, J. H. Brewer et al. · Hyperfine Interactions · 1991 · 53 citations