InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

Abstract

To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p-GaN hillocks were formed on the emission surface of an InGaN∕GaN multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled hillock density was raised up to a low 109cm−2 using several nanometers of a Si0.4C0.6N1 self-masking layer. The self-assembled hillock LED resulted in the optical power improvement up to 80% with similar electrical properties as a normal LED. This device showed a higher electrostatic discharge pass yield at over 1000V reverse stress voltage.