Deviations from Matthiessen's Rule of the Electrical Resistivity of Dislocations in Aluminum

Abstract

The electrical resistivities have been measured in temperature range from 4.2 K to 300 K on both deformed and quenched aluminum, and the deviations from Matthiessen's rule have been observed in both the resistivity of dislocations and of the faulted loops formed by quenched-in vacancies. The deviations show comparatively similar behavior as the whole, but in detail show somewhat different profile. The results were compared with data published by the other investigators. It is concluded that the origin of the deviation for the dislocation resistivity comes from the anisotropy in scattering mechanism. Furthermore the specific electrical resistivity of dislocation and stacking fault in aluminum were estimated as 1.2×10 -19 ohm-cm 3 and 3.7×10 -13 ohm-cm 2 , respectively.