Aligned Carbon Nanotube Film Self-Organized on a SiC Wafer

Abstract

An aligned carbon nanotube film was fabricated on the surface of an α-SiC wafer by heating at 1700°C for 30 min. in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.